Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas <i>via</i> isotopic tracking
نویسندگان
چکیده
The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied the presence oxygen gas pulsing is investigated means isotopic tracking 18O from water precursor and 16O gas.
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2021
ISSN: ['2050-7526', '2050-7534']
DOI: https://doi.org/10.1039/d0tc05439a